The Impact of Grain Boundaries on Charge Transport in Polycrystalline Organic Field?Effect Transistors
نویسندگان
چکیده
The active element of an organic field effect transistor (OFET) is a polycrystalline transport layer. crystallites are interrupted by grain boundaries (GB) that can act as traps or barriers to the charge-carriers. Their impact on charge and hence performance OFET still not fully understood. Employing kinetic Monte Carlo studies, authors set up well-defined test systems explore how parameters system, for example, thickness GB, their fractional contribution overall film, energies GB relative crystallites, affect OFET. It found these control position Fermi level, which crucial in controlling whether confined it takes place superposition between filamentary delocalized tunneling-mediated across crystallites. Guidelines morphological optimization films different modes derived.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2021
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202100115